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TopGaN is the first to demonstrate a laser diode fully fabricated by PA MBE method. TopGaN is the one of pioneers of the development of nitride multi-emitter sources for displays, medicine, printing and environmental applications.
- TopGaN Lasers - Visible and UV laser diodes 400nm - 461nm
Lasers for strontium atomic clocks. Special wavelengths,...
- TopGaN Lasers - Visible and UV laser diodes 400nm - 461nm
Lasers for strontium atomic clocks. Special wavelengths, among others: Customized photonic solutions. Visible and UV laser diodes. 400nm - 461nm Optical amplifiers and superluminescent diodes for quantum technologies and sensing applications.
The AlGaInN material system allows lasers diodes to be fabricated from the u.v. (~370nm) to visible (~530nm). TopGaN advantages: • GaN substrate • MOCVD & MBE epitaxy. • Single mode operation GaN Lasers for quantum technology: AlGaInN material system
About Us. We are pioneers in the development of gallium nitride based technologies in Europe. Founded is 2001, TopGaN was a second company in Europe to demonstrate violet laser diodes and since then it introduced many innovative technologies in the field of nitride emitters, including:
A DFB fiber laser cavity is formed by a single π-phase-shifted fiber Bragg grating (FBG) inscribed directly in an active fiber. Such integrated structure is usu-ally more stable than the cavity...
We report on GaN lasers with extremely narrow linewidth (~1MHz) at ‘magic wavelengths’ for cold-atom interferometry quantum sensors, using extended cavity GaN laser diodes and DFB GaN laser diodes.
8 lip 2024 · The laser provides mode-hop-free tuning over a wide range of injections currents and operating temperatures by design and can serve as an enabling component for more complex systems such as chips with additional monolithically integrated amplifiers, chip arrays and sources for hybrid integrated photonic circuits. Introduction:
