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In common with all power semiconductor devices, power MOSFETs have their own technical strengths, weaknesses and subtleties, which need to be properly understood if the designer is to avoid reliability issues.
- Gate drive for power MOSFETs in switching applications
The following application note provides a brief introduction...
- Power MOSFET Basics
Discrete power MOSFETs employ semiconductor processing...
- Gate drive for power MOSFETs in switching applications
There are a lot of uses for MOSFETs, as a result, they have become more commonplace than standard BJT or NPN transistors, especially in high-power applications. This article will discuss different MOSFET circuit designs, specifically for high-powered applications.
Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications.
MOSFET transistor (see Figure 4b). Because of its exten-sive junction area, the current ratings and thermal resist-ance of this diode are the same as the power MOSFET. This parasitic diode does exhibit a very long reverse recov-ery time and large reverse recovery current due to the long minority carrier lifetimes in the N-drain layer, which pre-
20 kwi 2022 · The following application note provides a brief introduction to silicon power MOSFETs and explains their differences with bipolar power transistors and insulated-gate bipolar transistors (IGBTs).
Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different from the design used in VLSI devices.
This document explains selecting MOSFETs and what we have to consider for designing MOSFET circuit, such as temperature characteristics, effects of wire inductance, parasitic oscillations, avalanche ruggedness, and snubber circuit.
