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Aluminium arsenide is a III-V compound semiconductor material and is an advantageous material for the manufacture of optoelectronic devices, such as light emitting diodes. Aluminium arsenide can be prepared using well-known methods, such as liquid and vapor-phase epitaxy techniques or melt-growth techniques.
It is possible to grow parabolic quantum wells by continuously varying the composition of an alloy. Our structure consists of a 10 nm A l x G a 1 − x A s parabolic quantum well (the x alloy content varies parabolically) that is surrounded by 10 nm A l A s barriers on each side.
1 cze 2017 · AlAs is a convenient alternative for lattice matched GaInP (different anion) etch-stops. In MBE systems phosphorus is often avoided due to its accumulation on the chamber walls and possible ignition during the system venting.
21 lis 2014 · From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices.
Cross-sectional transmission electron microscope image of a 7-nm AlAs, 5-nm GaAs 50-period superlattice grown at Purdue. The bright regions are the GaAs layers, whereas the darker regions correspond to AlAs.
27 lut 2020 · We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis. A silicon nitride template was deposited on a p -type GaAs substrate. Then a pattern was transferred to the substrate by nanoimprint lithography and reactive ion etching.
15 mar 2008 · After nominal deposition of 100 nm GaAs, the average height of the resultant GaAs microstructures in the window was measured as a function of the distance between two holes in the hexagonal lattice. The height was obtained from AFM measurements and was averaged from several measurements.
