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  1. MOSFET (ang. metal-oxide-semiconductor field-effect transistor) – technologia produkcji tranzystorów polowych z izolowaną bramką i obwodów układów scalonych. Jest to aktualnie podstawowa technologia produkcji większości układów scalonych stosowanych w komputerach i stanowi element technologii CMOS.

  2. en.wikipedia.org › wiki › MOSFETMOSFET - Wikipedia

    In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.

  3. en.wikipedia.org › wiki › Dawon_KahngDawon Kahng - Wikipedia

    Kang Daewŏn. Dawon Kahng (Korean: 강대원; May 4, 1931 – May 13, 1992) was a Korean-American electrical engineer and inventor, known for his work in solid-state electronics. He is best known for inventing the MOSFET (metal–oxide–semiconductor field-effect transistor, or MOS transistor), along with his colleague Mohamed Atalla, in 1959.

  4. 6 wrz 2024 · It is a compact transistor that has been miniaturised and mass-produced for a wide range of applications, revolutionizing the electronics industry and the world economy, and being central to the digital revolution, silicon age and information age.

  5. 3 kwi 2023 · By contrast, development of the metal-oxide-semiconductor (MOS) field-effect transistor (FET) took decades, from its conception in the 1920s to an initial working device at the very end of the 1950s, to working commercial products in the 1960s.

  6. 14 gru 2021 · An overview of a P-channel (left) and N-channel (right) MOSFETs. Image used courtesy of The Engineering Projects. Follow along as we share Dawon Kahng and Martin Atalla's stories, the MOSFET's inventors, and two of today's most influential EE figureheads.

  7. Metal-oxide-semiconductor-field-effect-transistors (MOSFETS) are the most widely utilized semiconductor transistors in contemporary technology. MOSFETS are four-terminal devices consisting of a source, drain, gate and ground.

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