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A JFET, or junction field-effect transistor, or JUGFET, is a FET in which the gate is created by reverse-biased junction (as opposed to the MOSFET which creates a junction via a field generated by conductive gate, separated from the gate region by a thin insulator). Construction n-channel JFET.
Like bipolar junction transistor, junction field effect transistor JFET is also a three-terminal device but it is a unipolar device, which shall mean that the current is made of either electron or hole carrier. The operation of JFET is controlled by electric field effect.
A Field-E ect Transistor (FET) has a gate (G) terminal which controls the current ow between the other two terminals, viz., source (S) and drain (D). In simple terms, a FET can be thought of as a resistance connected between S and D, which is a function of the gate voltage VG.
This discussion presents a brief look at the junction field effect transistor, or JFET. The example we consider is a depletion mode, N-channel part. P channel parts represent an "obvious" extension.
JFET Transistor. N-Channel. MMBFU310LT1G. Features. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS. • Compliant. MAXIMUM RATINGS. Stresses exceeding those listed in the Maximum Ratings table may damage the device.
Field Effect Transistors. Although there are lots of confusing names for field effect transistors (FETs) there are basically two main types: The reverse biased PN junction types, the JFET or Junction FET, (also called the JUGFET or Junction Unipolar Gate FET). The insulated gate FET devices (IGFET).
JFET There is a long derivation to determine how the current depends on V G and V D. We will find a relatively simple formula (probably familiar to electrical engineers). Understanding the derivation is important for knowing when this formula is valid.
