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This application note covers some of the major issues normally encountered in the design of an IGBT power circuits. It is the companion to AN-983, "IGBT Characteristics," which covers the details of the de-vice, rather than its application.
This application note describes the various differences between the next and previous generation. The IR211(0,3) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enable 16-Lead SOIC. 14-Lead PDIP IR2110S/IR2113S. ruggedized monolithic construction.
The block diagram of the IR2110 will be used to illustrate the typical structure of most MGDs (Figure 2). It comprises a drive circuit for a ground referenced power transistor, another for a high side one, level translators and input logic circuitry.
This application note describes the various differences between the existing IR2136x IC family and the new IRS2136xD family, and provides helpful information for adopting the new IRS2136xD HVICs into existing designs.
The application note is clear on ceramic vs. electrolytic capacitors: "Factor 5" (bootstrap capacitor leakage current) "... is only relevant if the bootstrap capacitor is an electrolytic capacitor, and can be ignored if other types of capacitor are used."
This application note covers some of the major issues normally encountered in the design of an IGBT power conditioning circuit. It is the companion to INT-983, "IGBT Characteristics."
