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This application note covers some of the major issues normally encountered in the design of an IGBT power circuits. It is the companion to AN-983, "IGBT Characteristics," which covers the details of the de-vice, rather than its application.
How to use IR2110 MOSFET/IGBT driver as high side and low side driver? With details on pinout diagram, examples, applications and download datasheet
Logic inputs are compatible with IR2110/IR2113 standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.
This application note describes the various differences between the next and previous generation. The IR211(0,3) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The block diagram of the IR2110 will be used to illustrate the typical structure of most MGDs (Figure 2). It comprises a drive circuit for a ground referenced power transistor, another for a high side one, level translators and input logic circuitry.
This application note covers some of the major issues normally encountered in the design of an IGBT power conditioning circuit. It is the companion to INT-983,
19 maj 2015 · I am simulating a mosfet gate driver (IR2110), at high frequency (1MHz), for an half bridge, feeding an induction load. My design is based on an IRF application note (AN 978). The issues that I have are as follow:
