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This application note covers some of the major issues normally encountered in the design of an IGBT power circuits. It is the companion to AN-983, "IGBT Characteristics," which covers the details of the de-vice, rather than its application.
This application note describes the various differences between the next and previous generation. The IR211(0,3) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
Features. Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune. Gate drive supply range from 10 to 20V. Undervoltage lockout for both channels.
How to use IR2110 MOSFET/IGBT driver as high side and low side driver? With details on pinout diagram, examples, applications and download datasheet
The block diagram of the IR2110 will be used to illustrate the typical structure of most MGDs (Figure 2). It comprises a drive circuit for a ground referenced power transistor, another for a high side one, level translators and input logic circuitry.
6 dni temu · IR2110SPBF Infineon Technologies Gate Drivers HI LO SIDE DRVR 500V 2A 10ns datasheet, inventory, & pricing.
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
