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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. MOSFETs operate very differently from bipolar transistors.
- 15 & 17 Meter Band Transistor 10 Watt Amplifier
Allmode RF Power Amplifier for the 15 meterband (21Mc)...
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Version 4 SHEET 1 1176 680 WIRE 320 -224 160 -224 WIRE 416...
- 15 & 17 Meter Band Transistor 10 Watt Amplifier
Third generation power MOSFETs from Vishay provide the max. (nC) 8.3 designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
IRF510 Final Amplifier Stage. The IRF510 is almost like ladies "panty hose" ~ worn everywhere, easily accessed/removed and durable as hell. With but a few components and around 200 to 300 MW of drive it is easy to see 5 watts at the output of an IRF510 Amp.
A Simple Cheap 50 Watt PA. IRF510 push pull amplifier. I built this amplifier so that I could be heard above the QRN and QRM on 40 meters in the evening. I found I could work stations in about a 200km radius during the day with 5 - 10 watts, but at night I could work no one at all.
przybierają w tranzystorach typu mosfet wartości od setek pikofaradów do pojedynczych nanofaradów. Dla IRF 510 pojemność wejściowa wynosi 120-180 pF, a wyjściowa około 120 pF. W przypadku stosowania tych tranzystorów w układach przełącznikowych o małych częstotliwościach pracy (rzędu setek Herców) nie ma to znaczenia.
IRF510. Power MOSFET. General Information. General Information. Useful Web Links. Markings. Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information.
TrenchFET® Gen V power MOSFET with a very low R DS x Q g figure-of-merit (FOM).
