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The magnified HAADF-STEM image (Figure 1e) and the corresponding fast Fourier transform (FFT) pattern (Figure 1f) demonstrate that thermodynamically stable fcc-Au domains with twin boundaries remain after the etching process, indicating the selective etching of metastable 4H-Au in the 4H/fcc heterophase Au NWs.
Etching of thin films and sometimes the silicon substrate are very common process steps. Usually selectivity, and directionality are the first order issues. Basic Terminology. Wet Etching. Dry / Plasma Etching. Mechanisms. Example. Reactor Designs. Summary and Appendix.
10 sie 2022 · A loss of facet selectivity is observed when a high electron fluence was applied to etch the PbSe nanocrystals. Figure 2E displays the time-lapse LCTEM images of a PbSe nanocrystal etched at 2000 e − Å −2 s −1, which finishes within 5 s (movie S2).
10 sie 2022 · A loss of facet selectivity is observed when a high electron flu-ence was applied to etch the PbSe nanocrystals. Figure 2E dis-plays the time-lapse LCTEM images of a PbSe nanocrystal etched at 2000 e− Å−2 s−1, which finishes within 5 s (movie S2). This is ~10 times shorter than that at 400 e− Å
17 maj 2019 · We evaluated the etched profile of patterned samples using the previously described method to identify the selectivity of Si 3 N 4 etch to other material. Figure 7 indicates the TEM images of etched profile in Si 3 N 4 etch with H ion modification and removal steps.
26 mar 2018 · Photo-electrochemical (PEC) etching can produce high-aspect ratio features, such as pillars and holes, with high anisotropy and selectivity, while avoiding the surface and sidewall damage caused by traditional deep reactive ion etching (DRIE) or inductively coupled plasma (ICP) RIE.
Etch selectivity refers to the ability of an etching process to preferentially remove one material over another during the fabrication of micro and nano structures.
