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1. ieeexplore.ieee.org › document › 10423504Advancements in Schottky Diode Technology: A Comprehensive Review...

   ieeexplore.ieee.org › document › 10423504

   Schottky diodes, known for their fast switching speeds and low forward voltage drop, play a crucial role in various electronic applications, including rectifiers, mixers, and detectors. The review encompasses novel materials used and fabrication techniques.

2. www.mdpi.com › 1996/1944/17-8 › 1870A Review of β-Ga2O3 Power Diodes - MDPI

   www.mdpi.com › 1996/1944/17-8 › 1870

   • Zapisane w pamięci cache

   18 kwi 2024 · Consequently, current research is primarily focused on unipolar Ga 2 O 3 power electronic devices, including field-effect transistors (FETs) and Schottky barrier diodes (SBDs) [33,34,35]. Compared to traditional p-n junction diodes, SBDs exhibit lower turn-on voltages and faster recovery times, making them commonly employed in low-power and ...

3. www.nature.com › articles › s41467/022/31664-yUltra-wide bandgap semiconductor Ga2O3 power diodes - Nature

   www.nature.com › articles › s41467/022/31664-y

   6 lip 2022 · The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga2O3 power diodes demonstrate their great potential for next-generation power electronics...

4. iopscience.iop.org › article › 10A review of gallium oxide-based power Schottky barrier diodes

   iopscience.iop.org › article › 10

   8 wrz 2022 · In this article, we review the advanced progress and important achievements of the state-of-the-art Ga 2 O 3 -based power Schottky barrier diodes, and provide staged guidance for the further development of Ga 2 O 3 power devices.

5. www.jos.ac.cn › article › doiA landscape of β -Ga 2 O 3 Schottky power diodes

   www.jos.ac.cn › article › doi

   • Zapisane w pamięci cache

   β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.

6. www.mdpi.com › 2073/4352/12-3 › 406β-Ga2O3-Based Power Devices: A Concise Review - MDPI

   www.mdpi.com › 2073/4352/12-3 › 406

   • Zapisane w pamięci cache

   16 mar 2022 · In this review article, we selectively summarized the recent advances on the experimental and theoretical demonstration of β-Ga2O3-based power devices, including Schottky barrier diodes and field-effect transistors, aiming for an inherent comprehending of the operating mechanisms, discussion on the obstacles to be addressed, and providing some ...

7. iopscience.iop.org › article › 10A landscape of β-Ga2O3 Schottky power diodes - IOPscience

   iopscience.iop.org › article › 10

   1 wrz 2023 · β -Ga 2 O 3 Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications. This paper reviews state-of-the-art β -Ga 2 O 3 rectifier technologies, including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.