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  1. The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

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      IR2110E4 Datasheet (PDF) Download Datasheet: Part #...

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  2. The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan-nels. Proprietary HVIC and latch immune CMOS technologies enable 16-Lead SOIC. 14-Lead PDIP IR2110S/IR2113S. ruggedized monolithic construction.

  3. EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB.

  4. The IR2110 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs.

  5. Download IR2110 Datasheet. File Size: 328.55 Kbytes. Part #: IR2110. Description: HIGH AND LOW SIDE DRIVER. Manufacturer: International Rectifier.

  6. Part #: IR2110. Download. File Size: 491Kbytes. Page: 17 Pages. Description: HIGH AND LOW SIDE DRIVER. Manufacturer: Infineon Technologies AG.

  7. www.infineon.com › dgdl › Infineon-IR2110E4-DataSheet-v01_01-ENIR2110E4 - Infineon Technologies

    The IR2110E4 is a high voltage, high speed power feature a high pulse current buffer stage designed for MOSFET and IGBT driver with independent high and low minimum driver cross-conduction. Propagation delays side referenced output channels.

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