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Please refer to our Application Notes and DesignTips for proper circuit board layout. 1. Absolute Maximum Ratings. Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-eters are absolute voltages referenced to COM.
- Application Note AN-1100
This application note describes the various differences...
- Application Note AN-1100
How to use IR2110 MOSFET/IGBT driver as high side and low side driver? With details on pinout diagram, examples, applications and download datasheet
IR2110. Overview. 500 V high-side and low-side gate driver IC with shutdown. EiceDRIVER™ 500 V high and low-side gate driver IC with typical 2.5 A source and 2.5 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 16 Lead SOIC WB.
This application note describes the various differences between the next and previous generation. The IR211(0,3) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
The block diagram of the IR2110 will be used to illustrate the typical structure of most MGDs (Figure 2). It comprises a drive circuit for a ground referenced power transistor, another for a high side one, level translators and input logic circuitry.
The block diagram of the IRS2110 will be used to illustrate the typical structure of most MGDs; this is shown in Figure 2.
Description. The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro-prietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output.
