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DESCRIPTION. Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
MOSFET switching times are essentially independent of operating temperature - 8 12 ns Rise Time tr-25 63 ns Turn-Off Delay Time td(OFF)-15 7 ns Fall Time tf-12 59 ns Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14) Gate charge is essentially independent of ...
This project uses a widely available IRF510 MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
20 sie 2021 · IRF510 is a third-generation Power MOSFET with the best combination of fast switching and low on-state resistance. This component is available at a lower cost. Hence, it is widely used in industrial applications for power dissipation levels up to 43W.
IRF510. Power MOSFET. General Information. General Information. Useful Web Links. Markings. Part Marking Information. TO-220, I2PAK (TO-262), D2PAK (TO-263) (High Voltage) Packaging Information.
27 lut 2023 · The IRF510 is a popular N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) commonly used in electronic circuits for various applications, including audio amplifiers, power supplies, and switching circuits.
22 lip 2022 · IRF510, an N-channel Power MOSFET, has the best combination of quick switching and low resistance to on-state. The component is offered at a cheaper price. This is why it is extensively utilized in industrial applications for power dissipation that go up to 43W.
