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The nature of the low-frequency 1/f noise in electronic materials and devices is one of the oldest unsolved physical problems (f is the frequency). The fundamental question of the noise source—fluctuations in the mobility vs. number of charge carriers—is still debated.
9 sie 2023 · In this work, we provide evidence of anisotropic mobility fluctuations by demonstrating a strong field-induced suppression of noise in a high-mobility graphene Corbino disk, even though the...
5 sie 2013 · Published reports agree that the low-frequency noise in graphene is scale-invariant and reveals a 1/ f spectral dependence with fo in the range ∼ 1 to 100 kHz, which is similar to metals...
Abstract. The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the. strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed. to the electron mobility fluctuations, the direct evidence is lacking (f is the frequency). Here we.
27 lut 2024 · At low frequencies (DC), 1/ f noise (also known as flicker noise, pink noise, or drift) is the main bottleneck to achieve high SNR. 1,7–9 Flicker noise, characterized by a spectral density S f ∼ 1 / f γ (where f represents frequency and γ ≈ 1), is ubiquitous in many physical processes.
Here we show that the flicker noise, or the 1/f noise, in electrical resistance is a sensitive and robust probe to the band structure of graphene. At low temperatures, the dependence of noise magnitude on the carrier density was found to be opposite for the linear and parabolic bands.
Graphene is a unique material system in the 1/f noise context owing to its two-dimensional (2D) nature, unusual linear energy dispersion for electrons and holes, zero energy band gap, specific scattering mechanisms, and metallic type conductance.
